PANJIT PJD25N04_L2_00001 MOSFET 40V N沟道增强型MOSFET

Fall Time: 29 ns

Rise Time: 29 ns

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 4.4 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 9.4 ns

Typical Turn-Off Delay Time: 21 ns

Id - Continuous Drain Current: 21 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V