PANJIT PJD60R620E_L2_00001 600V N沟道超结MOSFET
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ModelPJD60R620E_L2_00001
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Technology: Si
Unit Weight: 297 mg
Qg - Gate Charge: 21 nC
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 7 A
Rds On - Drain-Source Resistance: 620 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4 V
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