PANJIT PJE8412_R1_00001 30V N沟道增强型MOSFET带ESD保护

Fall Time: 31 ns

Rise Time: 20 ns

Technology: Si

Unit Weight: 2 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 870 pC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 7.1 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 350 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 2.3 Ohms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V