PANJIT PJMB130N65EC_R2_00601 MOSFET 650V 130毫欧 29A 易驱动 SJ MOSFET

Fall Time: 77 ns

Rise Time: 79 ns

Technology: Si

Unit Weight: 14.450 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 51 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 235 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 62 ns

Typical Turn-Off Delay Time: 201 ns

Id - Continuous Drain Current: 29 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 130 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V