PANJIT PJMF280N65E1_T0_00201 MOSFET 650V 280mΩ 超结易用版

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Qg - Gate Charge: 30 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 35.7 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 13.8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 280 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V