PANJIT PJMP210N65EC_T0_00601 MOSFET 650V 390毫欧 10A 易驱动 SJ MOSFET

Fall Time: 61 ns

Rise Time: 65 ns

Technology: Si

Unit Weight: 2.095 mg

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 34 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 150 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 111 ns

Id - Continuous Drain Current: 19 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 210 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 4 V