PANJIT PJQ4468AP_R2_00001 MOSFETs 60V N沟道增强型MOSFET
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ModelPJQ4468AP_R2_00001
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Technology: Si
Unit Weight: 30.495 mg
Qg - Gate Charge: 20 nC
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 34 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
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