PANJIT PJQ5410_R2_00001 30V N沟道增强型MOSFET
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ModelPJQ5410_R2_00001
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Technology: Si
Unit Weight: 80 mg
Qg - Gate Charge: 12 nC
Moisture Sensitive: Yes
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 6 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
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