PANJIT PJS6407_S1_00001 MOSFETs 30V P型增强型MOSFET
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ModelPJS6407_S1_00001
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Technology: Si
Unit Weight: 18 mg
Qg - Gate Charge: 14 nC
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 4.9 A
Rds On - Drain-Source Resistance: 64 mOhms
Vds - Drain-Source Breakdown Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 2.1 V
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