PANJIT PJS6415A_S2_00001 MOSFET 20V P沟道增强型MOSFET

Technology: Si

Unit Weight: 14.194 mg

Qg - Gate Charge: 10 nC

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Id - Continuous Drain Current: 5.2 A

Rds On - Drain-Source Resistance: 46 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V