PANJIT PJS6415A_S2_00001 MOSFET 20V P沟道增强型MOSFET
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ModelPJS6415A_S2_00001
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Technology: Si
Unit Weight: 14.194 mg
Qg - Gate Charge: 10 nC
Vgs - Gate-Source Voltage: - 12 V, + 12 V
Id - Continuous Drain Current: 5.2 A
Rds On - Drain-Source Resistance: 46 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1.3 V
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