PANJIT PJS6417_S1_00001 MOSFET 20V P沟道增强型MOSFET

Technology: Si

Unit Weight: 14.194 mg

Qg - Gate Charge: 18.9 nC

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Id - Continuous Drain Current: 6.5 A

Rds On - Drain-Source Resistance: 35 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 900 mV