PANJIT PJS6417_S1_00001 MOSFET 20V P沟道增强型MOSFET
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ModelPJS6417_S1_00001
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Technology: Si
Unit Weight: 14.194 mg
Qg - Gate Charge: 18.9 nC
Vgs - Gate-Source Voltage: - 8 V, + 8 V
Id - Continuous Drain Current: 6.5 A
Rds On - Drain-Source Resistance: 35 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 900 mV
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