PANJIT PJS6421-AU_S1_000A1 MOSFET 20V P沟道增强型MOSFET
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ModelPJS6421-AU_S1_000A1
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Technology: Si
Unit Weight: 18 mg
Qualification: AEC-Q101
Qg - Gate Charge: 16.5 nC
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Id - Continuous Drain Current: 7.4 A
Rds On - Drain-Source Resistance: 26 mOhms
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
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