PANJIT PJX8802_R2_00001 MOSFETs 20V N沟道增强型MOSFET-ESD保护

Fall Time: 31 ns

Rise Time: 26 ns

Technology: Si

Unit Weight: 6 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 1.6 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 300 mW

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 41 ns

Id - Continuous Drain Current: 700 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 400 mOhms

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1 V