PANJIT PSMD099N10LS2_L2_00601 MOSFETs 优秀 FOM / 100V/9.9毫欧 / TO-252AA

Fall Time: 2.8 ns

Rise Time: 2.4 ns

Technology: Si

Unit Weight: 297 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 25 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 79 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.7 ns

Typical Turn-Off Delay Time: 14.6 ns

Id - Continuous Drain Current: 58 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 67 S

Rds On - Drain-Source Resistance: 14 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.3 V