Power Integrations SIC1182K IGBT，MOSFET门极驱动器 8A 1200V 加强型隔离用于SiC

Shutdown: No Shutdown

Fall Time: 447 ns

Rise Time: 475 ns

Technology: SiC

Unit Weight: 2.558 g

Mounting Style: SMD/SMT

Off Time - Max: 325 ns

Output Current: 8 A

Number of Drivers: 1 Driver

Number of Outputs: 1 Output

Moisture Sensitive: Yes

Supply Voltage - Max: 5.25 V

Supply Voltage - Min: 4.75 V

Pd - Power Dissipation: 1.79 W

Propagation Delay - Max: 305 ns, 325 ns

Operating Supply Current: 35 mA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C