Powerex QRD3310002 Dual Common Emitter IGBT Power Module
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ModelQRD3310002
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Speed: Standard Recovery >500ns > 200mA(Io)
Diode type: Standard
Mounting Type: Chassis Mount
Diode Configuration: 1Series Connection
Reverse recovery time: 1.2us
Spannung – DC Reverse Vr Max: 3300V
Spannung – Vorwärts (Vf) Max: 4.3V@100A
Current - Average Rectified Io per Diode: 90A
Current - Reverse Leakage with Vr Applied: 5mA@3300V
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