Qorvo QPD1004SR 氮化镓场效应晶体管 .03-1.2GHz 25W 50V 氮化镓

Gain: 20.8 dB

Technology: GaN

Unit Weight: 4.609 g

Output Power: 40 W

Mounting Style: SMD/SMT

Development Kit: QPD1004EVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27.6 W

Maximum Drain Gate Voltage: 55 V

Maximum Operating Frequency: 1.2 GHz

Minimum Operating Frequency: 30 MHz

Id - Continuous Drain Current: 3.6 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: 145 V

Vds - Drain-Source Breakdown Voltage: 50 V