Qorvo QPD1013SR 氮化镓场效应晶体管 DC-2.7GHz 150W PAE 64.8%

Gain: 21.8 dB

Technology: GaN

Unit Weight: 7.792 g

Output Power: 178 W

Configuration: Single Triple Drain

Mounting Style: SMD/SMT

Development Kit: QPD1013EVB01

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 67 W

Maximum Drain Gate Voltage: 65 V

Maximum Operating Frequency: 2.7 GHz

Minimum Operating Frequency: 1.2 GHz

Id - Continuous Drain Current: 1.7 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C