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Gain: 23.9 dB
Technology: GaN
Output Power: 680 W
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: QPD1016EVB01
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 714 W
Maximum Drain Gate Voltage: 55 V
Maximum Operating Frequency: 1.7 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 70 A
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 7 V to 1.5 V
Vds - Drain-Source Breakdown Voltage: 145 V
