Qorvo QPD1016 氮化镓场效应晶体管 DC-1.7 GHz, 500W, 50V, 氮化镓射频晶体管

Gain: 23.9 dB

Technology: GaN

Output Power: 680 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: QPD1016EVB01

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 714 W

Maximum Drain Gate Voltage: 55 V

Maximum Operating Frequency: 1.7 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 7 V to 1.5 V

Vds - Drain-Source Breakdown Voltage: 145 V