Qorvo QPD1022SR 氮化镓场效应管 DC-12GHz 10W 32V GaN

Gain: 24 dB

Technology: GaN

Output Power: 10 W

Mounting Style: SMD/SMT

Development Kit: QPD1022EVB01

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 13.8 W

Maximum Operating Frequency: 12 GHz

Minimum Operating Frequency: 0 Hz

Id - Continuous Drain Current: 610 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 40 C

Vgs - Gate-Source Breakdown Voltage: - 2.8 V

Vds - Drain-Source Breakdown Voltage: 32 V