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Gain: 24 dB
Technology: GaN
Output Power: 10 W
Mounting Style: SMD/SMT
Development Kit: QPD1022EVB01
Transistor Type: HEMT
Moisture Sensitive: Yes
Transistor Polarity: N-Channel
Pd - Power Dissipation: 13.8 W
Maximum Operating Frequency: 12 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 610 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 2.8 V
Vds - Drain-Source Breakdown Voltage: 32 V
