Qorvo TGF3015-SM 氮化镓场效应晶体管 .03-3GHz 增益 17dB P3dB 9.3W@2.4GHz 氮化镓

Gain: 17.1 dB

Technology: GaN

Unit Weight: 6.745 g

Output Power: 11 W

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: TGF3015-SM-EVB1

Transistor Type: HEMT

Moisture Sensitive: Yes

Transistor Polarity: N-Channel

Pd - Power Dissipation: 15.3 W

Maximum Operating Frequency: 3 GHz

Minimum Operating Frequency: 30 MHz

Id - Continuous Drain Current: 557 mA

Vgs - Gate-Source Breakdown Voltage: - 2.7 V

Vds - Drain-Source Breakdown Voltage: 32 V