Rectron 2N5551-T 双极型晶体管 NPN 0.6A 160V

Technology: Si

Unit Weight: 453.600 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

DC Current Gain hFE Max: 250

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 600 mA

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 160 V

Collector-Emitter Saturation Voltage: 200 mV