Renesas Electronics 2SK2225-80-E#T2 MOSFET功率MOSFET 2A 1500V TO-3PFM 无铅

Width: 15.5 mm

Height: 5.5 mm

Length: 26.5 mm

Fall Time: 50 ns

Rise Time: 50 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 17 ns

Typical Turn-Off Delay Time: 150 ns

Id - Continuous Drain Current: 2 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 0.45 S

Rds On - Drain-Source Resistance: 12 Ohms

Vds - Drain-Source Breakdown Voltage: 1.5 kV

Vgs th - Gate-Source Threshold Voltage: 4 V