Renesas Electronics 2SK3812-ZP-E1-AZ 功率MOSFET TRS2

Fall Time: 15 ns

Rise Time: 160 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 250 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 213 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 42 ns

Typical Turn-Off Delay Time: 140 ns

Id - Continuous Drain Current: 110 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 50 S

Rds On - Drain-Source Resistance: 2.8 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V