Renesas Electronics H5N2005DSTL-E N沟道功率MOSFET 200V 6A 3引脚 DPAK 卷带包装

No. of Pins: 3

Channel Type: N Channel

Power Dissipation: 25

Transistor Mounting: Surface Mount

Transistor Case Style: TO-252 (DPAK)

Drain Source Voltage Vds: 200

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 6

Drain Source On State Resistance: 650

Gate Source Threshold Voltage Max: 4.5

Datasheet