Renesas Electronics N0400P-ZK-E1-AY 功率MOSFET TRS2

Width: 6.1 mm

Height: 2.3 mm

Length: 6.5 mm

Fall Time: 93 ns

Rise Time: 16 ns

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 25 W

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 104 ns

Id - Continuous Drain Current: 15 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V