Renesas Electronics NP160N055TUK-E1-AY MOSFET 低压功率MOSFET

Width: 9.15 mm

Height: 4.9 mm

Length: 10 mm

Fall Time: 11 ns

Rise Time: 14 ns

Technology: Si

Unit Weight: 1.600 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: N-Channel MOS Field Effect Transistor

Qg - Gate Charge: 126 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 250 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 30 ns

Typical Turn-Off Delay Time: 100 ns

Id - Continuous Drain Current: 160 A

Maximum Operating Temperature: + 175 C

Rds On - Drain-Source Resistance: 2.1 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 4 V