Renesas Electronics NP29N06QDK-E1-AY MOSFET功率TR2汽车用MOS双N沟道

Fall Time: 2 ns

Rise Time: 5 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 16 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 44 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 15 ns

Typical Turn-Off Delay Time: 40 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 175 C

Forward Transconductance - Min: 10 S

Rds On - Drain-Source Resistance: 20 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V