Renesas Electronics NP83P04PDG-E1-AY MOSFET 小信号 低压功率 MOSFET

Width: 9.15 mm

Height: 4.9 mm

Length: 10 mm

Fall Time: 21 ns

Rise Time: 21 ns

Technology: Si

Unit Weight: 4 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 35 ns

Typical Turn-Off Delay Time: 245 ns

Id - Continuous Drain Current: 83 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Vds - Drain-Source Breakdown Voltage: 40 V