Renesas Electronics RBN75H125S1FP4-A0#CB0 IGBT晶体管 功率晶体管 1250V IGBT 75A G8H

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 517 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 1.25 kV

Continuous Collector Current Ic Max: 300 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 150 A