Renesas Electronics RJE0605JPD-00#J3 MOSFET功率MOSFET

Width: mm

Height: mm

Length: mm

Fall Time: 1.3 us

Rise Time: 4 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 30 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 4.5 us

Typical Turn-Off Delay Time: 1.8 us

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 4 S

Rds On - Drain-Source Resistance: 75 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V