Renesas Electronics RJE0609JPD-00#J3 MOSFET 硅 P 沟道 MOS FET 系列

Width: mm

Height: mm

Length: mm

Fall Time: 1.05 us

Rise Time: 2.58 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 30 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 2.97 us

Typical Turn-Off Delay Time: 1.55 us

Id - Continuous Drain Current: 4 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 2 S

Rds On - Drain-Source Resistance: 100 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V