Renesas Electronics RJE0617JSP-00#J0 MOSFETs 电源 TRS1 汽车电源 热敏

Width: 3.95 mm

Height: mm

Length: 4.9 mm

Fall Time: 6.3 us

Rise Time: 3.4 us

Technology: Si

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 0.9 us

Typical Turn-Off Delay Time: 3.2 us

Id - Continuous Drain Current: 1.5 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 1.5 S

Rds On - Drain-Source Resistance: 350 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V