Renesas Electronics RJE0621JSP-00#J0 MOSFET功率TRS1汽车电源热敏SOP-8J

Width: 3.95 mm

Height: mm

Length: 4.9 mm

Fall Time: 5.6 us

Rise Time: 5.1 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 16 V, + 2.5 V

Typical Turn-On Delay Time: 1.2 us

Typical Turn-Off Delay Time: 2.1 us

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 1.5 S

Rds On - Drain-Source Resistance: 270 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V