Renesas Electronics RJF0408JPD-01#J3 MOSFET功率TRS1车载电源散热DPAK

Rise Time: 14.9 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 3.7 us

Typical Turn-Off Delay Time: 10.4 us

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V