Renesas Electronics RJF0411JPD-01#J3 MOSFET晶体管汽车电源散热DPAK

Fall Time: 9.9 us

Rise Time: 12.8 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 3 us

Typical Turn-Off Delay Time: 4 us

Id - Continuous Drain Current: 34 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 12 S

Rds On - Drain-Source Resistance: 37 mOhms

Vds - Drain-Source Breakdown Voltage: 40 V