Renesas Electronics RJF0611JPD-00#J3 MOSFET功率TRS车载电源散热DPAK

Width: mm

Height: mm

Length: mm

Fall Time: 7.2 us

Rise Time: 12.7 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 4 us

Typical Turn-Off Delay Time: 3.5 us

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V