Renesas Electronics RJF0612JPE-01#J3 MOSFET功率TRS1汽车电源热LDPAK

Fall Time: 84.5 us

Rise Time: 63.2 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 100 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 14 us

Typical Turn-Off Delay Time: 57.4 us

Id - Continuous Drain Current: 50 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 26 S

Rds On - Drain-Source Resistance: 7.5 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V