Renesas Electronics RJF0619JPE-00#J3 MOSFET功率TRS1汽车电源热LDPAK THEMA

Fall Time: 7.3 us

Rise Time: 13.5 us

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 50 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 3.8 us

Typical Turn-Off Delay Time: 4.1 us

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 40 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V