Renesas Electronics RJF0624JSP-00#J0 MOSFETs N沟道 热敏场效应管 60V 3A 160毫欧 SOP-8

Fall Time: 3 us

Rise Time: 11 us

Technology: Si

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 2.5 V, + 16 V

Typical Turn-On Delay Time: 1.9 us

Typical Turn-Off Delay Time: 1.1 us

Id - Continuous Drain Current: 3 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 180 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V