Renesas Electronics RJH60D1DPP-A0#T2 IGBT功率晶体管 IGBT 600V 10A

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 30 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 20 A