Renesas Electronics RJH60T04DPQ-A1#T0 IGBT晶体管 IGBT 650V TO247A

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 208.3 W

Gate-Emitter Leakage Current: +/- 1 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 60 A

Collector-Emitter Saturation Voltage: 1.5 V

Continuous Collector Current at 25 C: 60 A