Renesas Electronics RJH65T14DPQ-A0#T0 IGBT晶体管 IGBT 用于 IH 650V 50A TO247

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Gate-Emitter Leakage Current: +/- 1 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 100 A

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 100 A