Renesas Electronics RJK0354DSP-00#J0 MOSFETs SPEED系列 MOSFET 30V SO-8 无铅

Width: 3.95 mm

Height: mm

Length: 4.9 mm

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 12 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 2 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 16 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V