Renesas Electronics RJK0355DSP-00#J0 MOSFETs SPEED系列 MOSFET 30V SO-8 无铅

Width: 3.95 mm

Height: mm

Length: 4.9 mm

Fall Time: 4.8 ns

Rise Time: 3.5 ns

Technology: Si

Unit Weight: 83 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 6 nC

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.8 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 6.9 ns

Typical Turn-Off Delay Time: 40.2 ns

Id - Continuous Drain Current: 12 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 11.1 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V