Renesas Electronics RJK0652DPB-00#J5 MOSFETs JET系列MOSFET，60V，LFPAK，无铅，HF

Width: mm

Height: mm

Length: mm

Technology: Si

Unit Weight: 80 mg

Channel Mode: Enhancement

Mounting Style: SMD/SMT

Qg - Gate Charge: 29 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 55 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Id - Continuous Drain Current: 35 A

Maximum Operating Temperature: + 150 C

Rds On - Drain-Source Resistance: 7 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V