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Width: 3.3 mm
Height: 0.8 mm
Length: 3.3 mm
Fall Time: 5.6 ns
Rise Time: 4.8 ns
Technology: Si
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 3.7 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 10 W
Vgs - Gate-Source Voltage: - 5 V, + 12 V
Typical Turn-On Delay Time: 8.3 ns
Typical Turn-Off Delay Time: 35 ns
Id - Continuous Drain Current: 4 A
Maximum Operating Temperature: + 150 C
Forward Transconductance - Min: 8.8 S
Rds On - Drain-Source Resistance: 165 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
