Renesas Electronics RJK2511DPK-00#T0 MOSFET

Vgs (Max): 30V

Gate Charge (Qg): 120nC

Power consumption: 200W

Technology System: MOSFET(Metal Oxide)

Drain to Source voltage: 250V

Continuous drain current: 65A

Input Capacitance (Ciss): 4900pF

Operating temperature range: 150C

Field-effect transistor type: N-CH

Drain to Source on-state resistance: 34mOhm

Drive Voltage (Max Rds On, Min Rds On): 10V